| PART |
Description |
Maker |
| IRF1404SPBF IRF1404LPBF IRF1404STRLPBF IRF1404SPBF |
HEXFET垄莽 Power MOSFET
HEXFET? Power MOSFET
75 A, 40 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
Advanced Process Technology
|
International Rectifier
|
| IRFUC20 IRFRC20 IRFUC20PBF |
600V Single N-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.0A)
(IRFRC20 / IRFUC20) Power MOSFET
|
IRF[International Rectifier]
|
| MTP6N60EWC MTP6P20EW MTP6P20EWC MTP3N100E16 MTP3N1 |
6 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
6 A, 200 V, 1 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
8 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
33 A, 100 V, 0.058 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
4 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
15 A, 50 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
12 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
15 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
50 A, 50 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
20 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Motorola Mobility Holdings, Inc.
MOTOROLA INC
|
| IRL3714L IRL3714S IRL3714 IRL3714STRR |
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 36A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 20V的五（巴西）直| 36A条（丁）|63AB
HEXFET? Power MOSFET
Power MOSFET(Vdss=20V, Rds(on)max=20mohm, Id=36A)
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier, Corp.
http://
IRF[International Rectifier]
|
| NID9N05CL NID9N05CLT4 NID9N05CLT4G |
Power MOSFET
Power MOSFET 9 Amps, 52 Volts N-Channel, Logic Level(9 A, 52V?昏??靛钩锛???????MOSFET)
Power MOSFET 9 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package
|
ON Semiconductor
|
| VRF152E VRF152EMP VRF152E10 |
RF MOSFET (VDMOS) for 50V operation; P(out) (W): 150; P(in) (W): 6; Gain (dB): 14; VDD (V): 50; Coss (pF): 220; Case Style: M174 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER VERTICAL MOSFET
|
Microsemi, Corp.
Microsemi Corporation
|
| IRFP230 SSH40N15A SSH20N50A IRFP330 SSH60N10A |
9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
40 A, 150 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
20 A, 500 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
5.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
60 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
|
FAIRCHILD SEMICONDUCTOR CORP
|
| IRFP340 IRFP340PBF |
400V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
HEXFET? Power MOSFET
Power MOSFET(Vdss=400V, Rds(on)=0.55ohm, Id=11A) 功率MOSFET（减振钢板基本\u003d00V，的Rdson）\u003d 0.55ohm，身份证\u003d 11A条）
11 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| APT50M75LLL APT50M75B2LL APT50M75B2LL_04 APT50M75B |
Power MOSFET; Package: T-MAX™ [B2]; ID (A): 57; RDS(on) (Ohms): 0.075; BVDSS (V): 500; 57 A, 500 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS 7 R MOSFET
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| IRCZ44 |
60V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
Hexfet? Power MOSFET
Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=50A)
|
IRF[International Rectifier]
|
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